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TPIC6273N Datasheet(PDF) 3 Page - Texas Instruments

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No. de pieza TPIC6273N
Descripción Electrónicos  POWER LOGIC OCTAL D-TYPE LATCH
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TPIC6273
POWER LOGIC OCTAL D-TYPE LATCH
SLIS011A – APRIL 1992 – REVISED OCTOBER 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT
TYPICAL OF ALL DRAIN OUTPUTS
VCC
Input
GND
GND
DRAIN
45 V
12 V
25 V
12 V
absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)
Logic supply voltage, VCC (see Note 1)
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic input voltage range, VI
– 0.3 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power DMOS drain-to-source voltage, VDS (see Note 2)
45 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous source-drain diode anode current
1 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed source-drain diode anode current
2 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, all outputs on, IDn, TA = 25°C (see Note 3)
750 mA
. . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on, IDn, TA = 25°C
250 mA
. . . . . . . . . . . . . . . . . . . . . . . . . .
Peak drain current single output, IDM,TA = 25°C (see Note 3)
2 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, EAS (see Figure 4)
75 mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche current, IAS (see Note 4)
1 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ
–40
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to GND.
2. Each power DMOS source is internally connected to GND.
3. Pulse duration
≤ 100 µs, duty cycle ≤ 2%
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 100 mH, IAS = 1 A (see Figure 4).
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 125°C
POWER RATING
DW
1125 mW
9.0 mW/
°C
225 mW
N
1150 mW
9.2 mW/
°C
230 mW


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