Preliminary

This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to

change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-86602 Rev. **

Revised March 12, 2013

FM28V202

2Mbit (128K×16)F-RAM Memory

FEATURES

2Mbit Ferroelectric Nonvolatile RAM

Organized as 128Kx16

Configurable as 256Kx8 Using /UB, /LB

10

NoDelay™ Writes

Page Mode Operation to 33MHz

Advanced High-Reliability Ferroelectric Process

SRAM Compatible

Industry Std. 128Kx16 SRAM Pinout

60 ns Access Time, 90 ns Cycle Time

Advanced Features

Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Low Power Operation

2.0V – 3.6V Power Supply

Standby Current 120 A (typ)

Active Current 7 mA (typ)

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

44-pin “Green”/RoHS TSOP-II package

DESCRIPTION

The FM28V202 is a 128Kx16 nonvolatile memory

that reads and writes like a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional

disadvantages,

and

system

design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and high write endurance make the

F-RAM superior to other types of memory.

In-system operation of the FM28V202 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The F-RAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM28V202 ideal

for

nonvolatile

memory

applications

requiring

frequent or rapid writes in the form of an SRAM.

The device is available in a 400 mil 44-pin TSOP-II

surface mount package. Device specifications are

guaranteed over industrial temperature range –40°C

to +85°C.

Pin Configuration

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

NC

/ZZ

OE

A7

A6

A5

VSS

DQ12

DQ11

DQ8

DQ9

DQ10

LB

A8

A9

A10

A11

VDD

UB

DQ13

DQ14

DQ15

A4

A3

A2

A1

A0

A12

A13

DQ0

DQ1

DQ2

VSS

DQ3

DQ4

DQ5

DQ6

DQ7

WE

VDD

A14

A15

A16

CE