STD3LN62K3, STF3LN62K3, STP3LN62K3, STU3LN62K3

Electrical characteristics

Doc ID 18452 Rev 1

5/21

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

(see

Figure 19)

-

9

7

30

27

-

ns

ns

ns

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

2.5

10

A

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

240

1200

10

ns

nC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

(see

Figure 24)

-

265

1400

11

ns

nC

A

Table 9.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown

voltage

Igs= ± 1 mA (open drain)

30

-

V