FQD12P10 datasheet(3/9 Pages) FAIRCHILD

No. de pieza	FQD12P10

Descripción Electrónicos	100V P-Channel MOSFET

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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3 / 9 page

Rev. B, August 2002

0.0

0.5

1.0

1.5

2.0

2.5

3.0

10

-1

10

0

10

1

150!

" Notes :

1. V

GS = 0V

2. 250# s Pulse Test

25!

-V

SD , Source-Drain Voltage [V]

0

102030

40

0.0

0.2

0.4

0.6

0.8

" Note : T

J = 25

!

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

2

468

10

-1

10

0

10

1

150!

25!

-55!

" Notes :

1. V

DS = -40V

2. 250# s Pulse Test

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V

Bottom : -4.5 V

" Notes :

1. 250# s Pulse Test

2. T

C = 25

!

-V

DS, Drain-Source Voltage [V]

0

4

8

12

16

20

24

0

2

4

6

8

10

12

V

DS = -50V

V

DS = -20V

V

DS = -80V

" Note : I

D = -11.5 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

1400

1600

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

" Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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