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DS42MB200TSQ Datasheet(PDF) 7 Page - Texas Instruments

No. de Pieza. DS42MB200TSQ
Descripción  DS42MB200 Dual 4.25 Gbps 2:1/1:2 CML Mux/Buffer with Transmit Pre-Emphasis and Receive Equalization
Descarga  17 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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DS42MB200TSQ Datasheet(HTML) 7 Page - Texas Instruments

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DS42MB200
www.ti.com
SNOSAT8G – JANUARY 2006 – REVISED APRIL 2013
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ(1)
Max
Units
LVCMOS DC SPECIFICATIONS
VIH
High Level Input
2.0
VCC +0.3
V
Voltage
VIL
Low Level Input
−0.3
0.8
V
Voltage
IIH
High Level Input
VIN = VCC
−10
10
µA
Current
IIL
Low Level Input Current VIN = GND
75
94
124
µA
RPU
Pull-High Resistance
35
k
RECEIVER SPECIFICATIONS
VID
Differential Input
AC Coupled Differential Signal
Voltage Range
Below 1.25 Gbps
100
1750
mVP-P
At 1.25 Gbps–3.125 Gbps
100
1560
mVP-P
Above 3.125 Gbps
100
1200
mVP-P
This parameter is not production tested.
VICM
Common Mode Voltage Measured at receiver inputs reference to ground.
1.3
V
at Receiver Inputs
RITD
Input Differential
On-chip differential termination between IN+ or
84
100
116
Termination
IN
−.(2)
DRIVER SPECIFICATIONS
VODB
Output Differential
RL = 100Ω ±1%
Voltage Swing without
PRES_1=PRES_0=0
Pre-Emphasis
PREL_1=PREL_0=0
1000
1200
1400
mVP-P
Driver pre-emphasis disabled.
Running K28.7 pattern at 4.25 Gbps.(3)
See Figure 6 for test circuit.
VPE
Output Pre-Emphasis
RL = 100Ω ±1%
Voltage Ratio
Running K28.7 pattern at 4.25 Gbps(3)
20*log(VODPE/VODB)
PREx_[1:0]=00
0
dB
PREx_[1:0]=01
−3
dB
PREx_[1:0]=10
−6
dB
PREx_[1:0]=11
−9
dB
x=S for switch side pre-emphasis control
x=L for line side pre-emphasis control
See Figure 2 on waveform.
See Figure 6 for test circuit.
tPE
Pre-Emphasis Width(4)
Tested at
−9 dB pre-emphasis level, PREx[1:0]=11
x=S for switch side pre-emphasis control
125
200
250
ps
x=L for line side pre-emphasis control
See Figure 5 on measurement condition.
ROTSE
Output Termination
On-chip termination from OUT+ or OUT
− to VCC
42
50
58
ROTD
Output Differential
On-chip differential termination between OUT+ and
100
Termination
OUT
ΔROTSE
Mis-Match in Output
Mis-match in output terminations at OUT+ and
5
%
Termination Resistors
OUT
VOCM
Output Common Mode
2.4
2.9
V
Voltage
(1)
Typical parameters measured at VCC = 3.3V, TA = 25°C. They are for reference purposes and are not production-tested.
(2)
IN+ and IN
− are generic names refer to one of the many pairs of complimentary inputs of the DS42MB200. OUT+ and OUT− are
generic names refer to one of the many pairs of the complimentary outputs of the DS42MB200. Differential input voltage VID is defined
as |IN+–IN
−|. Differential output voltage VOD is defined as |OUT+–OUT−|.
(3)
K28.7 pattern is a 10-bit repeating pattern of K28.7 code group {001111 1000}K28.5 pattern is a 20-bit repeating pattern of +K28.5 and
−K28.5 code groups {110000 0101 001111 1010}
(4)
Specified by desigh and characterization using statistical analysis.
Copyright © 2006–2013, Texas Instruments Incorporated
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Product Folder Links: DS42MB200


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