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74HC259D Datasheet(PDF) 9 Page - NXP Semiconductors |
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74HC259D Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 23 page 74HC_HCT259 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 — 7 August 2012 9 of 22 NXP Semiconductors 74HC259; 74HCT259 8-bit addressable latch tsu set-up time D, An to LE; see Figure 10 and Figure 11 VCC = 2.0 V 80 19 - 100 - 120 - ns VCC = 4.5 V 16 7 - 20 - 24 - ns VCC = 6.0 V 14 6 - 17 - 20 - ns th hold time D to LE; see Figure 10 and Figure 11 VCC = 2.0 V 0 19 - 0 - 0 - ns VCC = 4.5 V 0 6- 0 - 0 - ns VCC = 6.0 V 0 5- 0 - 0 - ns An to LE; see Figure 10 and Figure 11 VCC = 2.0 V 2 11 - 2 - 2 - ns VCC = 4.5 V 2 4- 2 - 2 - ns VCC = 6.0 V 2 3- 2 - 2 - ns CPD power dissipation capacitance fi = 1 MHz; VI =GND to VCC [4] -19 - - - - - pF 74HCT259 tpd propagation delay D to Qn; see Figure 6 [2] VCC = 4.5 V - 23 39 - 49 - 59 ns VCC = 5.0 V; CL =15pF - 20 - - - - - ns An to Qn; see Figure 7 [2] VCC = 4.5 V - 25 41 51 62 ns VCC = 5.0 V; CL =15pF - 20 - - - - - ns LE to Qn; see Figure 8 [2] VCC = 4.5 V - 22 38 - 48 - 57 ns VCC = 5.0 V; CL =15pF - 20 - - - - - ns tPHL HIGH to LOW propagation delay MR to Qn; see Figure 9 VCC = 4.5 V - 23 39 - 49 - 59 ns VCC = 5.0 V; CL =15pF - 20 - - - - - ns tt transition time see Figure 8 [3] VCC = 4.5 V - 7 15 - 19 - 22 ns tW pulse width LE HIGH or LOW; see Figure 8 VCC = 4.5 V 19 11 - 24 - 29 - ns MR LOW; see Figure 9 VCC = 4.5 V 18 10 - 23 - 27 - ns Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 12. Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max Min Max |
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