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TPS65290BMRHFT Datasheet(PDF) 10 Page - Texas Instruments

No. de Pieza. TPS65290BMRHFT
Descripción  LOW QUIESCENT CURRENT, MULTI-MODE PMIC FOR BATTERY POWERED
Descarga  59 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS65290BMRHFT Datasheet(HTML) 10 Page - Texas Instruments

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TPS65290
SLVSBY5B – APRIL 2013 – REVISED JUNE 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
TJ = -40°C to 125°C, VBAT = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.6V, VOUT = 2.8V, TJ = -40°C to 125°C
VLDO_OUT_ACCURACY
DC output accuracy
-4
4
%
ILoad = 5mA
LDOLINE_REG
Line regulation
3.3V
≤ VIN ≤ 6V, VOUT = 2.8V, IOUT = 5mA
-1
1
%
LDOLOAD_REG
Load regulation
VIN = 2.2~5V, 0 ≤ IOUT ≤ 110mA
-2
2
%
Dropout voltage- allow for 5% output
VDROOP
VIN = 3.6~6V, 0 ≤ IOUT ≤ 150mA
300
mV
voltage droop
ICL
Output current limit
VLDO_OUT = 2.8V, output voltage shorted
300
mA
PSRR
Power-supply rejection ratio 10 kHz
VLDO_OUT = 2.8V, VIN = 3.1V, 150mA loading
28
dB
tSTRLDO
Startup time, bandgap already enabled
COUT = 2.2µF, VOUT = 2.8V, no load
200
µS
MICRO BIAS CIRCUIT (Different options)
Zero Leak Adjustable Bias (TPS65290ZB)
VIN
Input voltage range
2.2
5
V
VMICRO_MIN
Minimum output voltage
1.3
V
Voltage difference between VBAT (pin#4)
VBIAS_DROP
9 200mV drop steps from 0.6 to 2V
0.6
2.0
V
and Vmicro
DC output accuracy measured by
VOUT
TJ = +25°C, IOUT = 1µA, BAT=3.6V
-10
10
%
VBIAS_DROP.
IOUT = 100nA-10mA , TJ = +25°C, BAT = 3.6V,
ZEROLOAD_REG
Load regulation
15
%
VMICRO[3:0] = 0000
Low IDDQ LDO, aka LDOMINI (TPS65290LM)
VIN
Input voltage range
2.2
5
V
VLDO_RANGE
16 steps 0.2V from 1.8 to 3.3V
1.8
3.3
V
VOUT
DC output accuracy
TJ = +25°C, VIN = 3.6V, IOUT = 1µA
-5
5
%
LDOLOAD_REG
Load regulation
1µA
≤ IOUT ≤ 10mA
-5
5
%
Dropout voltage– allow for 5% output
VDROOP
VOUT = 2.2V, IOUT = 10mA
300
mV
voltage drop at VDROOP.
ICL
Output current limit
VLDO_OUT = 2.8V
20
50
mA
BUCKMINI Internal Converter Hysteretic (TPS65290BM)
VIN_BM
Input voltage range
2.2
5
V
ILoad_BM
Output load range
0
30
mA
LBM = 33µH, CBM = 1µF, ESR_CBM = 1Ω,
FSW_BM
(2)
BuckMINI switching frequency
5
Hz
No load
TJ = +25°C , LBM = 33µH, CBM = 1µF,
IPK_IND
(2)
Peak inductor current
ESR_CBM = 1Ω, VIN = 3.6V, VOUT = 2.5V,
80
mA
IOUT = 30mA with high-power mode
TJ = +25°C , LBM = 33µH, CBM = 1µF,
IPK_IND_STARTUP
(2)
Peak inductor current during start up
ESR_CBM = 1Ω, VIN = 3.6V, VOUT = 2.5V,
140
mA
IOUT = 30mA with high-power mode
TJ = +25°C , VIN = 3.6V, VOUT = 2.5V),
VBM_RIPPLE
(2)
Ripple voltage
5
%
LBM = 33µH, CBM = 1µF, ESR_CBM = 1Ω,
POWER SWITCHES
Distribution switch on resistance from
PWR_BB1
BB_OUT to pin PWR_BB1 (Single P
VIN = 3.6 V, VBB = 4.5 V, TA = 25°C
100
m
Mosfet)
Distribution switch on resistance from
PWR_VMAX_
VMAX to pin PWR_VMAX (Single P
VIN = 3.6 V, VBB = 4.5 V, TA = 25°C
600
m
VMAX
Mosfet)
Distribution switch on resistance from
PWR_BB2
BB_OUT to pin PWR_BB2 (Single P
VIN = 3.6 V, VBB = 4.5 V, TA = 25°C
600
m
Mosfet)
Distribution switch on resistance from
PWR_LDO1
LDO_OUT to pin PWR_LDO1 (Single P
VIN = 3.6 V, VLDO = 2.8 V, TA = 25°C
300
m
Mosfet)
Distribution switch on resistance from
PWR_LDO2
LDO_OUT to pin PWR_LDO2 (Single P
VIN = 3.6 V, VLDO = 2.8 V, TA = 25°C
600
m
Mosfet)
(2)
Specified by design.
10
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Product Folder Links: TPS65290


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