STP32N65M5 datasheet(9/22 Pages) STMICROELECTRONICS

No. de pieza	STP32N65M5

Descripción Electrónicos	N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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9 / 22 page

STB/F/I/P/W32N65M5

Test circuits

Doc ID 15316 Rev 4

9/22

3

Test circuits

Figure 19.

Switching times test circuit for

resistive load

Figure 20.

Gate charge test circuit

Figure 21.

Test circuit for inductive load

switching and diode recovery times

Figure 22.

Unclamped inductive load test

circuit

Figure 23.

Unclamped inductive waveform

Figure 24.

Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3

μF

VDD

AM01469v1

VDD

47k

Ω

1k

Ω

47k

Ω

2.7k

Ω

1k

Ω

12V

Vi=20V=VGMAX

2200

μF

PW

IG=CONST

100

Ω

100nF

D.U.T.

VG

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

RG

G

FAST

DIODE

D

S

L=100

μH

μF

3.3

1000

μF

VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200

μF

3.3

μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM05540v2

Id

Vgs

Vds

90%Vds

10%Id

90%Vgs

on

Tdelay-off

Tfall

Trise

Tcross -over

10%Vds

90%Id

Vgs(I(t))

on

-off

Tfall

Trise

-

))

Concept waveform for Inductive Load Turn-off

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