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STP32N65M5 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STP32N65M5
Descripción Electrónicos  N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP32N65M5 Datasheet(HTML) 3 Page - STMicroelectronics

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STB/F/I/P/W32N65M5
Electrical ratings
Doc ID 15316 Rev 4
3/22
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, D²PAK
TO-247, I²PAK
TO-220FP
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
24
24(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
15
15 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
96
96 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
35
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
8A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650
mJ
dv/dt (3)
3.
ISD ≤ 24 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP
I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-
case max
0.83
3.6
0.83
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
62.5
50
°C/W
Rthj-pcb
Thermal resistance junction-pcb
max
30
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C


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