ADC121S021

IN

V

+

LM4140A

6

2

1,4,7,8

3

V

+

1 PF

+

-

0.1 PF

10 PF

V

+

+

-

+

-

-

+

12 k:

10 k:

40 k:

½

LMP2232

R+'R

R+'R

R

R

V

+

V

+

V

+

12 k:

10 k:

40 k:

1 k:

½

LMP2232

GND

½

LMP2232

½

LMP2232

LMP2232

SNOSB02C – JANUARY 2008 – REVISED MARCH 2013

www.ti.com

Typical Application

Figure 1. Strain Gauge Bridge Amplifier

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Human Body Model

2000V

Machine Model

100V

Differential Input Voltage

±300 mV

6V

Voltage on Input/Output Pins

Storage Temperature Range

−65°C to 150°C

150°C

Mounting Temperature

Infrared or Convection (20 sec.)

+235°C

Wave Soldering Lead Temperature (10 sec.)

+260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate conditions for which the device

is intended to be functional, but specific performance is not ensured. For ensured specifications and test conditions, see the Electrical

Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of

JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

(4)

2

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