Transistors

1

Publication date: April 2007

SJC00364AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3938G

Silicon NPN epitaxial planar type

For high-speed switching

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

= 40 V, I

E

= 0

0.1

µA

Emitter-base cutoff current (Collector open)

0.1

µA

60

200



Collector-emitter saturation voltage

= 10 mA, I

B

= 1 mA

0.17

0.25

V

Base-emitter saturation voltage

1

V

Transition frequency

450

MHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

2

6

pF

(Common base, input open circuited)

Turn-on time

Refer to the measurement circuit

17

ns

Turn-off time

17

ns

Storage time

10

ns

■ Electrical Characteristics T

a

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

40

V

Collector-emitter voltage (E-B short)

40

V

Emitter-base voltage (Collector open)

5V

Collector current

100

mA

Peak collector current

300

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Rank

Q

R

60 to 120

90 to 200

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

■ Package

• Code

SMini3-F2

• Marking Symbol: 2Y

• Pin Name

1. Base

2. Emitter

3. Collector