SI4922BDY-T1-E3 datasheet(2/10 Pages) VISHAY

No. de pieza	SI4922BDY-T1-E3

Descripción Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

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Document Number: 74459

S09-0704-Rev. B, 27-Apr-09

Vishay Siliconix

Si4922BDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

30

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

35

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 4.6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

20

A

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 5 A

0.0135

0.016

Ω

VGS = 4.5 V, ID = 5 A

0.0145

0.018

VGS = 2.5 V, ID = 5 A

0.018

0.024

Forward Transconductanceb

gfs

VDS = 15 V, ID = 5 A

30

S

Dynamica

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2070

pF

Output Capacitance

Coss

255

Reverse Transfer Capacitance

Crss

135

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 5 A

41

62

nC

VDS = 15 V, VGS = 4.5 V, ID = 5 A

19

29

Gate-Source Charge

Qgs

3.5

Gate-Drain Charge

Qgd

3.7

Gate Resistance

Rg

f = 1 MHz

1.8

3

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 3 Ω

ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω

714

ns

Rise Time

tr

27

41

Turn-Off Delay Time

td(off)

31

47

Fall Time

tf

815

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 3 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

13

25

Rise Time

tr

53

80

Turn-Off Delay Time

td(off)

68

102

Fall Time

tf

54

81

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

2.5

A

Pulse Diode Forward Currenta

ISM

35

Body Diode Voltage

VSD

IS = 1.7 A

0.77

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C

32

48

ns

Body Diode Reverse Recovery Charge

Qrr

21

32

nC

Reverse Recovery Fall Time

ta

13

ns

Reverse Recovery Rise Time

tb

19

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