2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance

may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise

(Гopt) matching.

Table 1. RF Electrical Characteristics

TA=25°C, Vd=50V, Vg=-1.4V, Idq=85mA, Zin=Zout=50 Ω

Parameter

Min

Typ.

Max

Unit

Output Power, Pout

13

16

dBm

Input Power at 1dB Gain Compression,

IP-1dB

2

dBm

Input Return Loss, RLin

-15

dB

Output Return Loss, RLout

-10

dB

Fundamental Suppresion, Sup

18

25

dBc

3rd Harmonic Suppression, Sup3

25

dBc

4th Harmonic Suppression, Sup4

35

dBc

Single Side Band Phase Noise, SSBPN

(@100kHz offset, fout=15.6GHz)

-140

dBc

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Re-

sistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Id

85

110

mA

Vd = 5V, Under any RF power

drive and temperature

Gate Current, Ig

9

uA

Table 3. Thermal Properties

Parameter

Test Conditions

Value

Thermal Resistance,

qch-b

Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C

Thermal Resistance at backside temperature Tb=25°C

qch-b = 34 °C/W

Absolute Minimum and Maximum Ratings

Table 4. Minimum and Maximum Ratings

Description

Min.

Max.

Unit

Comments

Drain Supply Voltage, Vd

7

V

Gate Supply Voltage, Vg

-3.0

+0.5

V

Drain Current, Idq

120

mA

CW Input Power, Pin

15

dBm

Channel Temperature, Tch

+150

°C

Storage Temperature , Tstg

-65

+150

°C

Maximum Assembly Temperature, Tmax

+300

°C

60 second maximum

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.