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HGTG20N60A4D Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGTG20N60A4D Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 9 page  ©2002 Fairchild Semiconductor Corporation HGTG20N60A4D, HGT4E20N60A4DS Rev. C Diode Forward Voltage VEC IEC = 20A - 2.3 - V Diode Reverse Recovery Time trr IEC = 20A, dIEC/dt = 200A/µs- 35 - ns IEC = 1A, dIEC/dt = 200A/µs- 26 - ns Thermal Resistance Junction To Case RθJC IGBT - - 0.43 oC/W Diode - - 1.9 oC/W NOTE: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Electrical Specifications TJ = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME TC, CASE TEMPERATURE ( oC) 50 20 0 80 40 60 25 75 100 125 150 100 VGE = 15V PACKAGE LIMIT DIE CAPABILITY VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 60 0 20 300 400 200 100 500 600 0 80 100 40 120 TJ = 150 oC, R G = 3Ω, VGE = 15V, L = 100µH 5 ICE, COLLECTOR TO EMITTER CURRENT (A) 40 300 50 10 20 500 TJ = 125 oC, R G = 3Ω, L = 500µH, VCE = 390V 100 40 30 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RØJC = 0.43 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON2 + EOFF) TC VGE 15V 75oC VGE, GATE TO EMITTER VOLTAGE (V) 10 11 12 15 0 2 10 100 250 350 450 14 13 14 4 6 8 12 150 200 300 400 VCE = 390V, RG = 3Ω, TJ = 125 oC tSC ISC HGTG20N60A4D, HGT4E20N60A4DS |
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