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STD155N3LH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD155N3LH6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page September 2011 Doc ID 17893 Rev 3 1/18 18 STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 m Ω , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET Features ■ 100% avalanche tested ■ Logic level drive Applications ■ Switching applications ■ Automotive Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID (1) 1. Current limited by package PTOT STB155N3LH6 30 V 3.0 m Ω 80 A 110 W STD155N3LH6 DPAK D²PAK 1 3 TAB TAB 3 1 Table 1. Device summary Order codes Marking Package Packaging STB155N3LH6 155N3LH6 D2PAK Tape and reel STD155N3LH6 DPAK www.st.com |
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