Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
Si4542DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
|
Si4542DY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 70666 S09-0868-Rev. G, 18-May-09 Vishay Siliconix Si4542DY N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 30 20 40 TJ = 150 °C TJ = 25 °C - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 VGS - Gate-to-Source Voltage (V) ID = 6.9 A 0 5 10 15 20 25 30 0.01 0.10 1.00 10.00 Time (s) TC = 25 °C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10- 4 10- 3 10- 2 10- 1 1 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 10 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM -TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Número de pieza similar - Si4542DY-T1-E3 |
|
Descripción similar - Si4542DY-T1-E3 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |