SI2318DS_13 datasheet(1/8 Pages) VISHAY

No. de pieza	SI2318DS

Descripción Electrónicos	N-Channel 40-V (D-S) MOSFET

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Vishay Siliconix

Si2318DS

Document Number: 72322

S09-0130-Rev. B, 02-Feb-09

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1

N-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

APPLICATIONS

•

Stepper Motors

•

Load Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

40

0.045 at VGS = 10 V

3.9

0.058 at VGS = 4.5 V

3.5

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

*Marking Code

Si2318DS( C8)*

Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free)

Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a, b

TA = 25 °C

ID

3.9

3.0

A

TA = 70 °C

3.1

2.4

Pulsed Drain Currentb

IDM

16

Continuous Source Current (Diode Conduction)a, b

IS

0.8

Power Dissipationa, b

TA = 25 °C

PD

1.25

0.75

W

TA = 70 °C

0.8

0.48

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

75

100

°C/W

Steady State

120

166

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

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Descripción similar - SI2318DS_13

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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SI2318DS Datasheet(PDF) 1 Page - Vishay Siliconix

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