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MCP4441-502EML Datasheet(PDF) 3 Page - Microchip Technology

No. de pieza MCP4441-502EML
Descripción Electrónicos  7/8-Bit Quad I2C Digital POT with Nonvolatile Memory
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
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MCP4441-502EML Datasheet(HTML) 3 Page - Microchip Technology

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© 2010 Microchip Technology Inc.
DS22265A-page 3
MCP444X/446X
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Voltage on VDD with respect to VSS ................ -0.6V to +7.0V
Voltage on HVC/A0, A1, SCL, SDA, WP, and
RESET with respect to VSS ................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, and PxB)
with respect to VSS ......................................... -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin ed
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
..................................................................... -40°C to +125°C
Package power dissipation (TA = +50°C, TJ = +150°C)
TSSOP-14....................................................... 1000 mW
TSSOP-20....................................................... 1110 mW
QFN-20 (4x4) .................................................. 2320 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins
................................... ≥ 4 kV (HBM),
..........................................................................
≥ 300V (MM)
Maximum Junction Temperature (TJ) .........................+150°C
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.


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