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HUFA75309T3ST Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HUFA75309T3ST Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2001 Fairchild Semiconductor Corporation HUFA75309T3ST Rev. B Absolute Maximum Ratings TA = 25 oC, Unless Otherwise Specified HUFA75309T3ST UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 55 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 55 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20V V Drain Current Continuous (Note 2) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3 Figure 5 A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 14, 15 Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 9.09 W mW/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 55 - - V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Zero Gate Voltage Drain Current IDSS VDS = 50V, VGS = 0V - - 1 µA VDS = 45V, VGS = 0V, TA = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - 100 nA Drain to Source On Resistance rDS(ON) ID = 3A, VGS = 10V (Figure 9) - 0.057 0.070 Ω Turn-On Time tON VDD = 30V, ID ≅ 3A, RL = 10Ω, VGS = 10V, RGS = 28Ω - - 45 ns Turn-On Delay Time td(ON) -8 - ns Rise Time tr -20- ns Turn-Off Delay Time td(OFF) -12- ns Fall Time tf -28- ns Turn-Off Time tOFF - - 65 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 30V, ID ≅ 3A, RL = 10Ω Ig(REF) = 1.0mA (Figure 13) -19 23 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 10.7 13 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 0.71 0.85 nC Gate to Source Gate Charge Qgs -1.40- nC Gate to Drain “Miller” Charge Qgd -4.80- nC Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 352 - pF Output Capacitance COSS - 146 - pF Reverse Transfer Capacitance CRSS -30- pF Thermal Resistance Junction to Ambient RθJA Pad Area = 0.164 in2 (See note 2) - - 110 oC/W Pad Area = 0.068 in2 (See TB377) - - 126 oC/W Pad Area = 0.026 in2 (See TB377) - - 143 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 3A - - 1.25 V Reverse Recovery Time trr ISD = 3A, dISD/dt = 100A/µs- - 41 ns Reverse Recovered Charge QRR ISD = 3A, dISD/dt = 100A/µs- - 59 nC NOTE: 2. 110oC/W measured using FR-4 board with 0.164 in2 footprint for 1000 seconds. HUFA75309T3ST |
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