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HUFA75321P3 Datasheet(PDF) 3 Page - Fairchild Semiconductor

No. de pieza HUFA75321P3
Descripción Electrónicos  35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA75321P3 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA75321P3, HUFA75321S3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
-
680
-
pF
Output Capacitance
COSS
-
270
-
pF
Reverse Transfer Capacitance
CRSS
-60
-
pF
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 35A
-
-
1.25
V
Reverse Recovery Time
trr
ISD = 35A, dISD/dt = 100A/µs-
-
59
ns
Reverse Recovered Charge
QRR
ISD = 35A, dISD/dt = 100A/µs-
-
82
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
TC, CASE TEMPERATURE (
oC)
10
20
30
50
75
100
125
150
175
0
25
40
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10-4
10-3
10-2
10-1
100
101
10-5
0.1
1
2
0.01
HUFA75321P3, HUFA75321S3S


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