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STP11N52K3 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STP11N52K3
Descripción Electrónicos  N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11N52K3 Datasheet(HTML) 5 Page - STMicroelectronics

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STB11N52K3, STF11N52K3, STP11N52K3
Electrical characteristics
Doc ID 018868 Rev 2
5/20
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
10
40
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 10 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 19)
-
270
2700
20
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
-
320
3400
22
ns
nC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
-
-
V


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