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2N7002K-AU_S0_00001 Datasheet(PDF) 1 Page - Pan Jit International Inc.

No. de Pieza. 2N7002K-AU_S0_00001
Descripción  60V N-Channel Enhancement Mode MOSFET - ESD Protected
Descarga  7 Pages
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Fabricante  PANJIT [Pan Jit International Inc.]
Página de inicio  http://www.panjit.com.tw
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2N7002K-AU_S0_00001 Datasheet(HTML) 1 Page - Pan Jit International Inc.

   
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PAGE . 1
October 29,2010-REV.02
2N7002K-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (T
A=25
O
C unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PA RA ME TE R
S ymbol
Li mi t
Uni ts
D rai n-S ource Voltage
V
DS
60
V
Gate-S ource Voltage
V
GS
+20
V
C o nti nuo us D ra i n C urre nt
I
D
300
mA
P uls ed D rai n C urrent 1)
I
DM
2000
mA
Maxi mum P ower D i ssi pati on
T
A =2 5
O
C
T
A =7 5
O
C
P
D
350
210
mW
Operati ng Juncti on and S torage Temperature Range
T
J ,T STG
-55 to + 150
O
C
Junction-to Ambient Thermal Resistance(PCB mounted)2
R
θ
JA
357
O
C/W
MECHANICAL
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
• Marking : K72
DATA
SOT-23
Unit inch(mm)
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
FEATURES
• R
DS(ON), VGS@10V,IDS@500mA=3Ω
• R
DS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)


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