2N7002K-AU_T2_00001 datasheet(2/7 Pages) PANJIT

No. de pieza	2N7002K-AU_T2_00001

Descripción Electrónicos	60V N-Channel Enhancement Mode MOSFET - ESD Protected

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Fabricante Electrónico	PANJIT [Pan Jit International Inc.]

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PAGE . 2

October 29,2010-REV.02

ELECTRICALCHARACTERISTICS

VDD

VOUT

VIN

RG

RL

Switching

Test Circuit

Gate Charge

Test Circuit

VDD

VGS

RG

RL

1mA

P arameter

S ymbol

Test C ondi ti on

Mi n.

Typ.

Max.

Uni ts

Stati c

D rai n-S ource B reakdown Voltage

B V

DSS

V

GS=0 V , ID=1 0 μ A6 0

-

V

Gate Threshold Voltage

V

GS(th)

V

DS=V GS , ID =2 5 0 μ A1

-

2.5

V

D rai n-S ource On-S tate Resi s tance

R

DS(on)

V

GS=4.5V , I D=200mA

-

4.0

Ω

D rai n-S ource On-S tate Resi s tance

R

DS(on)

V

GS=10V , I D=500mA

-

3.0

Zero Gate Voltage D rai n C urrent

I

DS S

V

DS=60V , VGS=0V

--1

μ

A

Gate Body Leakage

I

GS S

V

GS=+ 20V , V DS=0 V

-

+10

μ

A

Forward Transconductance

g

fS

V

DS= 15V , ID = 250m A

100

-

mS

Dynamic

Total Gate C harge

Q

g

V

DS= 15V, ID =2 0 0 m A

V

GS=5V

--

0.8

nC

Turn-On Ti me

t

on

V

DD=30V , RL=150Ω

I

D=200mA , VGEN=10V

R

G=10Ω

--

20

ns

Turn-Off Ti me

t

off

--

40

Input C apaci tance

C

iss

V

DS= 25V , V GS=0 V

f=1.0MH

Z

--

35

pF

Output C apaci tance

C

oss

--

10

Reverse Transfer C apaci tance

C

rss

--

5

S ource-D rai n D i ode

D i ode F orward Voltage

V

SD

I

S=200mA , VGS=0V

-

0.82

1.3

V

C onti nuous D i ode F orward C urrent

I

S

-

300

mA

P ulse D i ode Forward C urrent

I

SM

-

2000

mA

2N7002K-AU

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2N7002K-AU_T2_00001 Datasheet(PDF) 2 Page - Pan Jit International Inc.

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