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KF5N40DI Datasheet(PDF) 2 Page - KEC(Korea Electronics) |
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KF5N40DI Datasheet(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2013. 2. 04 2/6 KF5N40D/I Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID= 250μA, VGS=0V 400 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID= 250μA, Referenced to 25℃ - 0.4 - V/ ℃ Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.1A - 1.3 1.6 Ω Dynamic Total Gate Charge Qg VDS=320V, ID=5A VGS=10V (Note4,5) - 5.4 - nC Gate-Source Charge Qgs - 1.5 - Gate-Drain Charge Qgd - 2.5 - Turn-on Delay time td(on) VDD=200V, ID=5A RG=25Ω (Note4,5) VGS=10V - 20 - ns Turn-on Rise time tr - 20 - Turn-off Delay time td(off) - 25 - Turn-off Fall time tf - 15 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 310 - pF Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 4.2 A Pulsed Source Current ISP - - 16.8 Diode Forward Voltage VSD IS=4.2A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, dIs/dt=100A/ μs - 260 - ns Reverse Recovery Charge Qrr - 1.1 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 4.9 mH, IS=5A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 KF5N40 001 D KF5N40 001 I 1 2 1 2 Marking |
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