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2N3019 Datasheet(PDF) 3 Page - Comset Semiconductor |
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2N3019 Datasheet(HTML) 3 Page - Comset Semiconductor |
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3 / 4 page  NPN 2N3019 – 2N3020 16/10/2012 COMSET SEMICONDUCTORS 3/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit fT Transition frequency IC =50 mA VCE =10 V f = 20 MHz 2N3019 100 - - MHz 2N3020 80 - - hfe Small Signal Current Gain IC =1 mA VCE =5 V f = 1 kHz 2N3019 80 - 400 - 2N3020 30 - 200 NF Noise Figure IC=-100 µA VCE =10 V f = 1 kHz Rg = 1kΩ 2N3019 - - 4 dB CCBO Collector-Base capacitance IE = 0 VCB=10 V f = 1 MHz 2N3019 - - 12 pF 2N3020 CEBO Emitter-Base capacitance IC = 0 VEB=0.5 V f = 1 MHz 2N3019 - - 60 pF 2N3020 rbb’Cb’c Feedback Time Constant IC =10 mA VCE =10 V f = 4 MHz 2N3019 - - 400 ps 2N3020 (*) Pulse conditions : tp < 300 µs, δ =2% |
Número de pieza similar - 2N3019_12 |
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Descripción similar - 2N3019_12 |
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