2N3055 datasheet(2/3 Pages) COMSET

No. de pieza	2N3055

Descripción Electrónicos	NPN SILICON DARLINGTONS

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Fabricante Electrónico	COMSET [Comset Semiconductor]

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2 / 3 page

2N3055

31/10/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining Voltage

(*)

IC=200 mA, IB=0

60

-

V

BVCER

Collector-Emitter Breakdown

Voltage (*)

IC=200 mA, RBE=100Ω

70

-

V

ICEO

Collector-Emitter Current

CVE=30 V, IB=0

-

0.7

MA

ICEX

Collector Cutoff Current

VCE=100 V, VEB(off)=1.5 V

-

5.0

mA

IEBO

Emitter Cutoff Current

VBE=7.0 V, IC=0

-

5.0

mA

hFE

DC Current Gain

IC=4.0 A, IB=4.0 Adc

20

-

70

VCE(SAT)

Collector-Emitter saturation Voltage

IC=4.0 A, IB=0.4 2Adc

-

1.1

V

VBE

Base-Emitter Voltage

IC=4.0 A, VCE=4.0 V

-

1.8

-

V

hfe

Small Signal Current Gain

VCE=4.0 V, IC=1.0 A

f=1.0 kHz

15

-

120

-

fαe

Small Signal Current Gain Cutoff

Frequency

VCE=4.0 V, IC=1.0 A

f=1.0 kHz

10

-

kHz

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC=0.2 A, IB=0 A

RBE= 100Ω

60

-

V

Is/b

Second Breakdown Collector

Current

t=1 S (non repetitive)

1.95

-

A

In accordance with JEDEC Registration Data

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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