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2N3055 Datasheet(PDF) 2 Page - Comset Semiconductor |
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2N3055 Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 3 page 2N3055 31/10/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC=200 mA, IB=0 60 - - V BVCER Collector-Emitter Breakdown Voltage (*) IC=200 mA, RBE=100Ω 70 - - V ICEO Collector-Emitter Current CVE=30 V, IB=0 - - 0.7 MA ICEX Collector Cutoff Current VCE=100 V, VEB(off)=1.5 V - - 5.0 mA IEBO Emitter Cutoff Current VBE=7.0 V, IC=0 - - 5.0 mA hFE DC Current Gain IC=4.0 A, IB=4.0 Adc 20 - 70 VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 A, IB=0.4 2Adc - - 1.1 V VBE Base-Emitter Voltage IC=4.0 A, VCE=4.0 V - 1.8 - V hfe Small Signal Current Gain VCE=4.0 V, IC=1.0 A f=1.0 kHz 15 - 120 - fαe Small Signal Current Gain Cutoff Frequency VCE=4.0 V, IC=1.0 A f=1.0 kHz 10 - - kHz VCER(SUS) Collector-Emitter Sustaining Voltage IC=0.2 A, IB=0 A RBE= 100Ω 60 - - V Is/b Second Breakdown Collector Current t=1 S (non repetitive) 1.95 - - A In accordance with JEDEC Registration Data (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
Número de pieza similar - 2N3055 |
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Descripción similar - 2N3055 |
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