MRF847 datasheet(2/4 Pages) MOTOROLA

No. de pieza	MRF847

Descripción Electrónicos	RF POWER TRANSISTOR NPN SILICON

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Fabricante Electrónico	MOTOROLA [Motorola, Inc]

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MRF847

2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 Adc, VCE = 5.0 Vdc)

hFE

40

65

120

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

75

90

pF

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)

GPB

4.5

5.5

—

dB

Collector Efficiency

(VCC = 12.5 Vdc, Pout = 45 W, f = 870 MHz)

ηc

60

68

—

%

Load Mismatch

(VCC = 15.5 Vdc, Pin = 16 W, f = 870 MHz,

VSWR = 10:1, All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. 806 – 870 MHz Broadband Test Circuit

C1 — 51 pF, 100 mil Chip Capacitor

C2 — 12 pF, Mini–Underwood

C3 — 11 pF, Mini–Underwood

C4, C5 — 21 pF, Mini–Underwood

C6 — 0.08 – 8.0 pF Johansen Gigatrim

C7 — 47 pF, 100 mil Chip Capacitor

C8, C13 — 10

µF, 25 WV Electrolytic Capacitor

C9, C12 — 1000 pF Unelco J101

C10, C11 — 91 pF Mini–Underwood

L1, L2 — 4 Turns #18 Enameled, 200 mil ID

L3, L4 — 12 Turns #22 Enameled, Wound Over 10

Ω Resistor

TL1, TL4 — 50

Ω Microstrip Line

TL2 — Microstrip (Zo = 38 ohms, λ/4 @ 838 MHz)

TL3 — Microstrip (Zo = 28 ohms, λ/4 @ 838 MHz)

Board Material — 0.032

″ Glass–Teflon, 2 oz. cu. clad, εr = 2.56

B — Ferrite Bead, Ferroxcube 56–590–65–3B

Vre PORT

SOCKET ASSY.

C1

C10

D.U.T.

B

+

+12.5 V

50

Ω

TL1

TL2

TL3

TL4

+

50

Ω

L3

C8

C9

L1

C3

C4

C2

C5

C6

C7

C11

C12

C13

B

L4

L2

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