74ABT125_4

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Product data sheet

Rev. 04 — 27 April 2010

3 of 15

NXP Semiconductors

74ABT125

Quad buffer; 3-state

6.

Functional description

[1]

H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.

7.

Limiting values

[1]

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2]

The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction

temperatures which are detrimental to reliability.

[3]

SO14 packages: above 70

°C P

SSOP14 and TSSOP20 packages: above 60

°C P

DHVQFN14 packages: above 60

°C P

8.

Recommended operating conditions

Table 3.

Function selection[1]

Inputs

Output

nOE

nA

nY

LLL

LH

H

HX

Z

Table 4.

Limiting values[1]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

−0.5

+7.0

V

input voltage

−1.2

+7.0

V

output voltage

output in OFF-state or HIGH-state

−0.5

+5.5

V

input clamping current

−18

-

mA

output clamping current

−50

-

mA

output current

output in LOW-state

-

128

mA

junction temperature

[2] -150

°C

storage temperature

−65

+150

°C

total power dissipation

[3] -500

mW

Table 5.

Operating conditions

Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

4.5

5.5

V

input voltage

0

V

HIGH-level input voltage

2.0

-

V

LOW-level Input voltage

-

0.8

V

HIGH-level output current

−32

-

mA

LOW-level output current

-

64

mA

Δt/ΔV

input transition rise and fall rate

-

10

ns/V

ambient temperature

in free air

−40

+85

°C