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BAS416 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAS416 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 2004 Jan 26 5 NXP Semiconductors Product data sheet Low-leakage diode BAS416 handbook, halfpage 10 2 10 3 150 200 50 0 MLB754 100 10 1 10 1 10 2 I R (nA) T ( C) o j (1) (2) Fig.5 Reverse current as a function of junction temperature. VR = 75 V. (1) Maximum values. (2) Typical values. handbook, halfpage 010 20 15 5 2 0 1 MBG526 VR (V) Cd (pF) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 |
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