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BDX63B Datasheet(PDF) 1 Page - Comset Semiconductor |
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BDX63B Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 4 page BDX63 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX63 60 V BDX63A 80 BDX63B 100 BDX63C 120 VCEV Collector-EmitterVoltage VBE=-1.5 V BDX63 80 V BDX63A 100 BDX63B 120 BDX63C 140 VEBO Emitter-Base Voltage 5.0 V IC Collector Current IC(RMS) 8 A ICM 12 IB Base Current 0.15 A PT Power Dissipation @ TC = 25° 90 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W |
Número de pieza similar - BDX63B |
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