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BDX66 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BDX66 Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 4 page BDX66 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 2/4 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit -VCEO(SUS) Collector-Emitter Breakdown Voltage (*) -IC=0.1 A L=25mH BDX66 60 - - V BDX66A 80 - - BDX66B 100 - - BDX66C 120 - - -ICEO Collector Cutoff Current -VCE=30 V BDX66 - - 3 mA -VCE=40 V BDX66A - - -VCE=50 V BDX66B - - -VCE=60 V BDX66C - - -IEBO Emitter Cutoff Current -VBE=5 V BDX66 - - 5.0 mA BDX66A BDX66B BDX66C -ICBO Collector-Base Cutoff Current -VCB=60 V BDX66 - - 1 mA -VCB=40 V TCASE=200°C - - 5 -VCB=80 V BDX66A - - 1 -VCB=50 V TCASE=200°C - - 5 -VCB=100 V BDX66B - - 1 -VCB=60 V TCASE=200°C - - 5 -VCB=120 V BDX66C - - 1 -VCB=70 V TCASE=200°C - - 5 hFE DC Current Gain -VCE=3 V - IC=1 A BDX66 - 2000 - - BDX66A BDX66B BDX66C -VCE=3 V - IC=10 A BDX66 1000 - - BDX66A BDX66B BDX66C -VCE=3 V - IC=16 A BDX66 - 1000 - BDX66A BDX66B BDX66C |
Número de pieza similar - BDX66_12 |
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Descripción similar - BDX66_12 |
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