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KSB601Y Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KSB601Y Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area Figure 5. Reverse Bias Safe Operating Areas Figure 6. Derating Curve of Safe Operating Areas -0 -1 -2 -3 -4 -5 -1 -2 -3 -4 -5 IB = -1.0mA IB = -6mA IB = -4mA IB = -0.8mA IB = -1.5 mA IB = -0.6mA IB = -2 m A IB = -10mA IB = -0.4mA VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -0.1 -1 -10 10 100 1000 10000 VCE = -2V IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 -0.1 -1 -10 VCE(sat) VBE(sat) IC = 1000 IB IC[A], COLLECTOR CURRENT -1 -10 -100 -0.001 -0.01 -0.1 -1 -10 100ms 10m s 100us 50us Diss ipat ion Li mite d VCE[V], COLLECTOR-EMITTER VOLTAGE -20 -40 -60 -80 -100 -120 -140 -160 -0 -2 -4 -6 -8 -10 -12 -14 -16 VCE[V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 Di ss ipat ion Li m ite d s/b Li mite d TC[ o C], CASE TEMPERATURE |
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