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FQD2N60CTM Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FQD2N60CTM
Descripción Electrónicos  N-Channel QFET짰 MOSFET
Download  9 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD2N60CTM Datasheet(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD2N60C
FQD2N60C
D-PAK
-
-
FDU2N60C
FDU2N60C
I-PAK
-
-
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BVDSS/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.95 A
--
3.6
4.7
gFS
Forward Transconductance
VDS = 40 V, ID = 0.95 A
(Note 4)
--
5.0
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
235
pF
Coss
Output Capacitance
--
20
25
pF
Crss
Reverse Transfer Capacitance
--
4.3
5.6
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 2 A,
RG = 25 Ω
(Note 4, 5)
--
9
28
ns
tr
Turn-On Rise Time
--
25
60
ns
td(off)
Turn-Off Delay Time
--
24
58
ns
tf
Turn-Off Fall Time
--
28
66
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 2 A,
VGS = 10 V
(Note 4, 5)
--
8.5
12
nC
Qgs
Gate-Source Charge
--
1.3
--
nC
Qgd
Gate-Drain Charge
--
4.1
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.9
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
7.6
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.9 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 2 A,
dIF / dt = 100 A/µs
(Note 4)
--
230
--
ns
Qrr
Reverse Recovery Charge
--
1.0
--
µC
www.fairchildsemi.com
©200
9 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev.
C0


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