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ADG602BRTZ-REEL7 Datasheet(PDF) 4 Page - Analog Devices

No. de pieza ADG602BRTZ-REEL7
Descripción Electrónicos  Low on resistance, 2.5 OHM maximum
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
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ADG602BRTZ-REEL7 Datasheet(HTML) 4 Page - Analog Devices

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ADG601/ADG602
Rev. C | Page 4 of 12
SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
B Version1
Parameter
+25°C
−40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
VDD = 4.5 V
On Resistance (RON)
3.5
Ω typ
VS = 0 V to 4.5 V, IDS = −10 mA; see Figure 15
5
8
Ω max
On-Resistance Flatness (RFLAT (ON))
0.2
0.2
Ω typ
VS = 1.5 V to 3.3 V, IDS = –10 mA
0.6
Ω max
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 16
±0.25
±1
nA max
Drain Off Leakage, ID (Off )
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 16
±0.25
±1
nA max
Channel On Leakage, ID, IS (On)
±0.01
nA typ
VS = VD = 4.5 V or 1 V; see Figure 17
±0.25
±1
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
Digital Input Capacitance, CIN
2
pF typ
DYNAMIC CHARACTERISTICS2
tON
110
ns typ
RL = 300 Ω, CL = 35 pF
220
280
ns max
VS = 3.3 V; see Figure 18
tOFF
50
ns typ
RL = 300 Ω, CL = 35 pF
80
110
ns max
VS = 3.3 V; see Figure 18
Charge Injection
20
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 19
Off Isolation
−60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20
Bandwidth –3 dB
180
MHz typ
RL = 50 Ω, CL = 5 pF; see Figure 21
CS (Off )
50
pF typ
f = 1 MHz
CD (Off )
50
pF typ
f = 1 MHz
CD, CS (On)
145
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
IDD
0.001
μA typ
Digital inputs = 0 V or 5.5 V
1.0
μA max
1 Temperature range for B version is −40°C to +85°C.
2 Guaranteed by design, not subject to production test.


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