2N6400 datasheet(1/7 Pages) ONSEMI

No. de pieza	2N6400

Descripción Electrónicos	Silicon Controlled Rectifiers Reverse Blocking Thyristors 50 thru 800 VOLTS

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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November, 2012 − Rev. 6

1

Publication Order Number:

2N6400/D

2N6400 Series

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half−wave silicon gate−controlled, solid−state devices are needed.

Features

• Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 V

• These are Pb−Free Devices

MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 125°C, Sine Wave 50 to 60

Hz; Gate Open)

2N6400

2N6401

2N6402

2N6403

2N6404

2N6405

VDRM,

VRRM

50

100

200

400

600

800

V

On-State Current RMS (180° Conduction

Angles; TC = 100°C)

IT(RMS)

16

A

Average On-State Current (180° Conduc-

tion Angles; TC = 100°C)

IT(AV)

10

A

Peak Non-repetitive Surge Current (1/2

Cycle, Sine Wave 60 Hz, TJ = 25°C)

ITSM

160

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

145

A2s

Forward Peak Gate Power (Pulse Width ≤

1.0 ms, TC = 100°C)

PGM

20

W

Forward Average Gate Power (t = 8.3 ms,

TC = 100°C)

PG(AV)

0.5

W

Forward Peak Gate Current (Pulse Width ≤

1.0 ms, TC = 100°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to

+125

°C

Storage Temperature Range

Tstg

−40 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

16 AMPERES RMS

50 thru 800 VOLTS

K

G

A

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

TO−220AB

CASE 221A

STYLE 3

1

2

3

4

MARKING

DIAGRAM

2N640xG

AYWW

x

= 0, 1, 2, 3, 4 or 5

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

Número de pieza similar - 2N6400

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	2N6400	74Kb / 8P	Silicon Controlled Rectifiers Reverse Blocking Thyristors April, 2001 ??Rev. 2
ON Semiconductor	2N6400	77Kb / 6P	Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS December, 2004 ??Rev. 3
New Jersey Semi-Conduct...	2N6400	150Kb / 1P	SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors	2N6400	264Kb / 5P	SILICON CONTROLLED RECTIFIERS
Kersemi Electronic Co.,...	2N6400	425Kb / 6P	Silicon Controlled Rectifiers

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