SBC817-16L datasheet(10/10 Pages) ONSEMI

No. de pieza	SBC817-16L

Descripción Electrónicos	General Purpose Transistors NPN Silicon Collector ??Emitter Voltage VCEO 45

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BC847C, BC848C, BC849C, BC850C, SBC847C

Figure 29. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 30. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

1.0

10

100

-55

°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 31. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 32. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4

0.6

1.0

10

20

1.0

2.0

6.0

40

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

0.7

1.0

10

20

2.0

50

30

7.0

5.0

3.0

0.5

VCE = 10 V

TA = 25°C

0.8

4.0

8.0

TA = 25°C

Cob

Cib

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SBC817-16L Datasheet(PDF) 10 Page - ON Semiconductor

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