BCP53-16T3G datasheet(2/5 Pages) ONSEMI

No. de pieza	BCP53-16T3G

Descripción Electrónicos	PNP Silicon Epitaxial Transistors

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

75

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25°C

1

mA

TJ = 125°C

500

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

2.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

4.4

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 240 mA

0.86

2.5

W

VGS = 4.5 V, ID = 50 mA

1.1

3.0

Forward Transconductance

gFS

VDS = 5 V, ID = 200 mA

530

mS

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = 25 V

26.7

40

pF

Output Capacitance

COSS

4.6

Reverse Transfer Capacitance

CRSS

2.9

Total Gate Charge

QG(TOT)

VGS = 5 V, VDS = 10 V;

ID = 240 mA

0.81

nC

Threshold Gate Charge

QG(TH)

0.31

Gate−to−Source Charge

QGS

0.48

Gate−to−Drain Charge

QGD

0.08

SWITCHING CHARACTERISTICS, VGS = V (Note 3)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDD = 30 V,

ID = 200 mA, RG = 10 W

1.7

ns

Rise Time

tr

1.2

Turn−Off Delay Time

td(OFF)

4.8

Fall Time

tf

3.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 200 mA

TJ = 25°C

0.79

1.2

V

TJ = 85°C

0.7

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

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