BD242C datasheet(2/6 Pages) ONSEMI

No. de pieza	BD242C

Descripción Electrónicos	Complementary Silicon Plastic Power Transistors 80??00 VOLTS

Download	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ONSEMI [ON Semiconductor]

Página de inicio	http://www.onsemi.com

Logo

2 / 6 page

BD241C (NPN), BD242B (PNP), BD242C (PNP)

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

BD242B

BD241C, BD242C

VCEO

80

100

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

BD242B

(VCE = 60 Vdc, IB = 0)

BD241C, BD242C

ICEO

0.3

mAdc

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

BD242B

(VCE = 100 Vdc, VEB = 0)

BD241C, BD242C

ICES

200

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

1.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.6 Adc)

VCE(sat)

1.2

Vdc

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = |hfe| • ftest.

40

30

20

10

0

20

40

60

80

100

120

140

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

Número de pieza similar - BD242C

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Mospec Semiconductor	BD242C	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Rectron Semiconductor	BD242C	76Kb / 3P	TO-220 - Power Transistors and Darlingtons
Motorola, Inc	BD242C	139Kb / 6P	Complementary Silicon Plastic Power Transistors
ON Semiconductor	BD242C	99Kb / 6P	Complementary Silicon Plastic Power Transistors November, 2007 - Rev. 7
ON Semiconductor	BD242C	108Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON

More results

Descripción similar - BD242C

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	MJE171	83Kb / 6P	Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS January, 2006 ??Rev. 9
Motorola, Inc	D45C	94Kb / 4P	4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS
ON Semiconductor	D44VH	51Kb / 4P	Complementary Silicon Power Transistors 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS March, 2001 ??Rev. 2
	MJE243	90Kb / 6P	Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS February, 2006 ??Rev. 11
	MJE5740	87Kb / 6P	NPN Silicon Power Darlington Transistors 8 AMPERES 300??00 VOLTS 80 WATTS February, 2006 ??Rev. 6
Motorola, Inc	BD243B	140Kb / 6P	Complementary Silicon Plastic Power Transistors
Motorola, Inc	BD787	148Kb / 6P	Complementary Plastic Silicon Power Transistors
New Jersey Semi-Conduct...	2N6107	297Kb / 3P	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
ON Semiconductor	2N6109G	117Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 9
ON Semiconductor	TIP29	143Kb / 5P	Complementary Silicon Plastic Power Transistors October, 2011 ??Rev. 11

More results

BD242C Datasheet(PDF) 2 Page - ON Semiconductor

BD242C Datasheet(HTML) 2 Page - ON Semiconductor

Número de pieza similar - BD242C

Descripción similar - BD242C

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL