SI6433BDQ-T1-GE3 datasheet(3/11 Pages) VISHAY

No. de pieza	SI6433BDQ-T1-GE3

Descripción Electrónicos	P-Channel 2.5-V (G-S) MOSFET

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Document Number: 72511

S-80682-Rev. C, 31-Mar-08

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Vishay Siliconix

Si6433BDQ

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.02

0.04

0.06

0.08

0.10

04

8

12

16

20

ID - Drain Current (A)

VGS = 4.5 V

V

GS = 2.5 V

0

1

2

3

4

5

6

0

3

6

9

12

15

VDS = 6 V

ID = 4.8 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

10

0.1

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

1

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

300

600

900

1200

1500

0

246

8

10

12

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

I

D = 4.8 A

T

J - Junction Temperature (°C)

0.00

0.03

0.06

0.09

0.12

0.15

0

123

456

ID = 4.8 A

V

GS - Gate-to-Source Voltage (V)

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SI6433BDQ-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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