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SI6433BDQ-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI6433BDQ-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 72511 S-80682-Rev. C, 31-Mar-08 www.vishay.com 3 Vishay Siliconix Si6433BDQ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.02 0.04 0.06 0.08 0.10 04 8 12 16 20 ID - Drain Current (A) VGS = 4.5 V V GS = 2.5 V 0 1 2 3 4 5 6 0 3 6 9 12 15 VDS = 6 V ID = 4.8 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 10 0.1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 300 600 900 1200 1500 0 246 8 10 12 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V I D = 4.8 A T J - Junction Temperature (°C) 0.00 0.03 0.06 0.09 0.12 0.15 0 123 456 ID = 4.8 A V GS - Gate-to-Source Voltage (V) |
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