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MCP14E4EMF Datasheet(PDF) 1 Page - Microchip Technology

No. de pieza MCP14E4EMF
Descripción Electrónicos  4.0A Dual High-Speed Power MOSFET Drivers With Enable
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
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MCP14E4EMF Datasheet(HTML) 1 Page - Microchip Technology

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© 2008 Microchip Technology Inc.
DS22062B-page 1
MCP14E3/MCP14E4/MCP14E5
Features
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver
Output
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
The
MCP14E3/MCP14E4/MCP14E5
drivers
are
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Additional
control
of
the
MCP14E3/MCP14E4/
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to VDD. The pins
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power
dissipation
capability
for
driving
heavier
capacitive or resistive loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs.
All
terminals
are
fully
protect
against
Electrostatic Discharge (ESD) up to 4 kV.
Package Types
ENB_A
IN A
GND
IN B
8-Pin
1
2
3
4
ENB_B
5
6
7
8
OUT A
OUT B
ENB_A
IN A
GND
IN B
VDD
Note 1: Exposed pad of the DFN package is electrically isolated.
MCP14E3
MCP14E4
ENB_B
OUT A
OUT B
VDD
MCP14E5
ENB_B
OUT A
OUT B
VDD
ENB_B
OUT A
OUT B
VDD
MCP14E3
MCP14E4
ENB_B
OUT A
OUT B
VDD
MCP14E5
ENB_B
OUT A
OUT B
VDD
PDIP/SOIC
8-Pin
6x5 DFN (1)
4.0A Dual High-Speed Power MOSFET Drivers With Enable


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