High Conductance Ultra Fast Diode

Sourced from Process 1P. See 1N4148 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

MMBD914

2 NC

3

1

CONNECTION DIAGRAM

Symbol

Characteristic

Max

Units

MMBD914*

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

5D

3

12

SOT-23

3

1

2

Symbol

Parameter

Value

Units

Working Inverse Voltage

75

V

Average Rectified Current

200

mA

DC Forward Current

600

mA

Recurrent Peak Forward Current

700

mA

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

1.0

2.0

A

A

Storage Temperature Range

-55 to +150

°C

Operating Junction Temperature

150

°C

Discrete POWER & Signal

Technologies

©1997 Fairchild Semiconductor Corporation