TC58DVG02A1FT00 datasheet(5/44 Pages) TOSHIBA

No. de pieza	TC58DVG02A1FT00

Descripción Electrónicos	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download	44 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

Página de inicio	http://www.semicon.toshiba.co.jp/eng

Logo

5 / 44 page

TC58DVG02A1FT00

2003-01-10

5/44

Note: (1) CE High to Ready time depends on the pull-up resistor tied to the

BY

/

RY

pin.

(Refer to Application Note (9) toward the end of this document.)

(2) Sequential Read is terminated when tCEH is greater than or equal to 100 ns. If the RE to CE delay

is less than 30 ns,

BY

/

RY

signal stays Ready.

PROGRAMMING AND ERASING CHARACTERISTICS

(Ta 0° to 70°C, VCC 2.7 V to 3.6 V)

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

NOTES

tPROG

Programming Time

200

1000

s

tDBSY

Dummy Busy Time for Multi Block

Programming

2

10

s

tMBPBSY

Multi Block Program Busy Time

200

1000

s

N

Number of Programming Cycles on Same

Page

3

(1)

tBERASE

Block Erasing Time

2

10

ms

(1): Refer to Application Note (12) toward the end of this document.

: 0 to 30 ns

Busy signal is not output.

A

CE

RE

tCEH

100 ns

*

525

Busy

BY

/

RY

*: VIH or VIL

A

526

527

tCRY

Número de pieza similar - TC58DVG02A1FT00

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Toshiba Semiconductor	TC58DVG02D5BAI4	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
	TC58DVG02D5BAI6	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
	TC58DVG02D5TA00	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)
	TC58DVG02D5TAI0	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)

More results

Descripción similar - TC58DVG02A1FT00

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Toshiba Semiconductor	TC55NEM208A	107Kb / 10P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58512FT	420Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TH58100FT	421Kb / 43P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC51WHM616AXBN70	207Kb / 11P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VEM316AXBN40	209Kb / 14P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VBM316AFTN	216Kb / 15P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58NVG1S3BFT00	315Kb / 37P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VCM216ASTN40	201Kb / 14P	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58FVM5T2AFT65	799Kb / 63P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VD1618FF-133	888Kb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

TC58DVG02A1FT00 Datasheet(PDF) 5 Page - Toshiba Semiconductor

TC58DVG02A1FT00 Datasheet(HTML) 5 Page - Toshiba Semiconductor

Número de pieza similar - TC58DVG02A1FT00

Descripción similar - TC58DVG02A1FT00

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44

Datasheet Descarga

Enlace URL