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AME8802OEEVL Datasheet(PDF) 6 Page - Analog Microelectronics |
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AME8802OEEVL Datasheet(HTML) 6 Page - Analog Microelectronics |
6 / 16 page AME 6 300mA CMOS LDO AME8802 Rev.K.02 n Absolute Maximum Ratings n Recommended Operating Conditions n Thermal Information Caution: Stress above the listed absolute rating may cause permanent damage to the device. * HBM B:2000V~3999V * Measure θ JC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F Parameter Maximum Unit Input Voltage 8 V Output Current PD / (VIN - VO) mA Output Voltage GND - 0.3 to VIN + 0.3 V ESD Classification B* Parameter Package Die Attach Symbol Maximum Unit Thermal Resistance * (Junction to Case) θJC 81 Thermal Resistance (Junction to Ambient) θJA 260 Internal Power Dissipation PD 400 mW 150 oC 350 oC Conductive Epoxy Maximum Junction Temperature Solder Iron (10Sec)** oC / W SOT-25 Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC |
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