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AME8808AEGSZ Datasheet(PDF) 6 Page - Analog Microelectronics |
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AME8808AEGSZ Datasheet(HTML) 6 Page - Analog Microelectronics |
6 / 13 page AME 6 750mA CMOS LDO AME8808 Rev.G.02 n Absolute Maximum Ratings n Recommended Operating Conditions Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device * HBM B: 2000~3999V n Thermal Information Parameter Package Die Attach Symbol Maximum Unit SOT-223 31 TO-252-2 30 SOT-223 135 TO-252-2 140 SOT-223 800 TO-252-2 1000 150 oC 350 oC Maximum Junction Temperature Solder Iron (10 Sec)** Internal Power Dissipation Non Conductive Epoxy mW oC / W PD θJC Thermal Resistance ( Junction to Ambient) θJA Thermal Resistance* ( Junction to Case) * Measure θ JC on backside center of tab. ** MIL-STD-202G 210F Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC Parameter Maximum Unit Input Voltage -0.3 to +8 V Output Voltage -0.3 to VIN + 0.3 V Output Current PD / (VIN - VOUT) mA ESD Classification B* |
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