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2SC5509-T2-A Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SC5509-T2-A Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page R09DS0056EJ0300 Rev.3.00 Page 1 of 8 Mar 5, 2013 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz • fT = 25 GHz technology adopted • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Order Number Quantity Package Supplying Form 2SC5509 2SC5509-A 50 pcs (Non reel) 2SC5509-T2 2SC5509-T2-A 3 kpcs/reel Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 190 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air. THERMAL RESISTANCE Parameter Symbol Ratings Unit Junction to Case Resistance Rth j-c 95 °C /W Junction to Ambient Resistance Rth j-a 650 °C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 <R> |
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