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2SC5509-T2-A Datasheet(PDF) 1 Page - Renesas Technology Corp

No. de pieza 2SC5509-T2-A
Descripción Electrónicos  NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5509-T2-A Datasheet(HTML) 1 Page - Renesas Technology Corp

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R09DS0056EJ0300 Rev.3.00
Page 1 of 8
Mar 5, 2013
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Preliminary Data Sheet
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
• fT = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Order Number
Quantity
Package
Supplying Form
2SC5509
2SC5509-A
50 pcs (Non reel)
2SC5509-T2
2SC5509-T2-A
3 kpcs/reel
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
8 mm wide embossed taping
Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TC = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
190
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air.
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
Rth j-c
95
°C /W
Junction to Ambient Resistance
Rth j-a
650
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
<R>


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