AML1005H5N6STS datasheet(11/16 Pages) RENESAS

No. de pieza	AML1005H5N6STS

Descripción Electrónicos	NPN SiGe RF Transistor for Low Noise, High-Gain

Download	16 Pages

Scroll/Zoom	100%

Fabricante Electrónico	RENESAS [Renesas Technology Corp]

Página de inicio	http://www.renesas.com

Logo

11 / 16 page

EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA)

C1

C3

R1

L1

R3

C4

R2

L2

C2

Tr. (NESG3033M14)

GND

VCC

NESG3033M14

GPS_LNA

IN

Notes 1. 15

× 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB.

2. Au plated on pattern

3.

: Through holes

NESG3033M14

R09DS0049EJ0300 Rev.3.00

Page 11 of 14

Sep 14, 2012

Número de pieza similar - AML1005H5N6STS

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
List of Unclassifed Man...	AML100	488Kb / 2P	AML100 AnalogML™ Chip Product Brief February 2022

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Renesas Technology Corp	NESG3032M14	168Kb / 15P	NPN SiGe RF Transistor for Low Noise, High-Gain
	NESG210719	124Kb / 10P	NPN SiGe RF Transistor for Low Noise, High-Gain
	2SC5761	305Kb / 16P	NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION May 2003
	NESG2031M05	158Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
	NESG2021M05	159Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
California Eastern Labs	NESG2046M33	292Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Labs	NESG204619	320Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NEC	NESG2046M33	118Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
	NESG210719	114Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
	NESG204619	116Kb / 3P	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION