ADG819BCBZ-REEL datasheet(4/16 Pages) AD

No. de pieza	ADG819BCBZ-REEL

Descripción Electrónicos	0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch

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Fabricante Electrónico	AD [Analog Devices]

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ADG819

Data Sheet

Rev. A | Page 4 of 16

VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.

Table 2.

Parameter

25°C

–40°C to

+85°C

–40°C to

+125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to V

DD

V

On Resistance, R

ON

1

0.7

Ω typ

V

S = 0 V to VDD, IS = 100 mA; see Figure 16

1.4

1.5

1.6

Ω max

On Resistance Match Between

Channels, ΔR

ON

1

0.06

Ω typ

V

S = 0 V to VDD, IS = 100 mA

0.13

Ω max

On Resistance Flatness, R

FLAT(ON)

1

0.25

Ω typ

V

S = 0 V to VDD, IS = 100 mA

LEAKAGE CURRENTS

V

DD = 3.6 V

Source Off Leakage, I

S (Off)

±0.01

nA typ

V

S = 3.3 V/1 V, VD = 1 V/3.3 V; see Figure 17

±0.25

±3

±10

nA max

Channel On Leakage, I

D, IS (On)

±0.01

nA typ

V

S = VD = 1 V, or VS = VD = 3.3 V; see Figure 18

±0.25

±3

±25

nA max

DIGITAL INPUTS

Input High Voltage, V

INH

2.0

V min

Input Low Voltage, V

INL

0.8

V max

Input Current

I

INL or IINH

0.005

μA typ

V

IN = VINL or VINH

±0.1

μA max

Digital Input Capacitance, C

IN

5

pF typ

DYNAMIC CHARACTERISTICS2

t

ON

40

ns typ

R

L = 50 Ω, CL = 35 pF, VS = 1.5 V; see Figure 19

60

65

70

ns max

t

OFF

10

ns typ

R

L = 50 Ω, CL = 35 pF, VS = 1.5 V; see Figure 19

16

18

21

ns max

Break-Before-Make Time Delay,

t

BBM

40

ns typ

R

L = 50 Ω, CL = 35 pF, VS1 = VS2 = 1.5 V; see Figure 20

1

ns min

Charge Injection

10

pC typ

V

S = 1.5 V, RS = 0 Ω,CL = 1 nF; see Figure 21

Off Isolation

−71

dB typ

R

L = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 22

Channel-to-Channel Crosstalk

−72

dB typ

R

L = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 24

Bandwidth, –3 dB

17

MHz typ

R

L = 50 Ω, CL = 5 pF; see Figure 23

C

S (Off)

80

pF typ

f = 1 MHz

C

D, CS (On)

300

pF typ

f = 1 MHz

POWER REQUIREMENTS

V

DD = 3.6 V, digital Inputs = 0 V or 3.6 V

I

DD

0.001

μA typ

1.0

2.0

μA max

1 On resistance parameters tested with I

S = 10 mA.

2 Guaranteed by design; not subject to production test.

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