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SMAJ5913BE3 Datasheet(PDF) 2 Page - Microsemi Corporation

No. de pieza SMAJ5913BE3
Descripción Electrónicos  Silicon 3.0 Watt Zener Diode
Download  6 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

SMAJ5913BE3 Datasheet(HTML) 2 Page - Microsemi Corporation

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RF01130, Rev. A (5/13/13)
©2013 Microsemi Corporation
Page 2 of 6
SMAJ5913Be3 – SMAJ5956Be3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
MARKING: Includes part number without prefix (e.g. 5913B, 5916Be3, 5926C, 5951De3, etc.).
POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end for
Zener regulation.
TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Consult factory for
quantities.
WEIGHT: Approximately 0.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
SM
A
J
5913
B
e3
Surface Mount Package
3 Watt Power Level
J-Bend Lead Form
JEDEC type number
(see Electrical
Characteristics table)
RoHS Compliant
Tolerance Level
A = 10% tolerance
B = 5% tolerance
C = 2% tolerance
D = 1% tolerance
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage VR and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VR
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively.


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