Document Number: 93551

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Revision: 17-Apr-08

3

SD600N/R Series

Standard Recovery Diodes

(Stud Version), 600 A

Vishay Semiconductors

Note

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

R

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

0.012

0.008

K/W

120°

0.014

0.014

90°

0.017

0.019

60°

0.025

0.026

30°

0.042

0.042

80

90

100

110

120

130

140

150

160

170

180

0

100

200

300

400

500

600

700

30°

60°

90°

120°

180°

Average Forward Current (A)

Cond uction Angle

R

(DC) = 0.1 K/ W

thJC

SD600N/ RSeries (400V to 2000V)

70

80

90

100

110

120

130

140

150

160

170

180

0

200

400

600

800

1000

30°

60°

90°

180°

DC

120°

Average Forward Current (A)

Cond uction Period

R

(DC) = 0.1 K/ W

thJC

SD600N/ RSeries (400V to 2000V)

50

60

70

80

90

100

110

120

130

140

150

0

100

200

300

400

500

600

700

30°

60°

90°

120°

180°

Average Forward Current (A)

Cond uction Angle

SD600N/ RSeries (2500V to 3200V)

R

(DC) = 0.1 K/ W

thJC

30

40

50

60

70

80

90

100

110

120

130

140

150

0

200

400

600

800

1000

30°

60°

90°

180°

DC

120°

Average Forward Current (A)

Conduction Period

SD600N/ RSeries(2500V to 3200V)

R

(DC) = 0.1 K/ W

thJC