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SD600N Datasheet(PDF) 5 Page - Vishay Siliconix

No. de Pieza. SD600N
Descripción  Standard Recovery Diodes
Descarga  9 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SD600N Datasheet(HTML) 5 Page - Vishay Siliconix

   
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Document Number: 93551
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 17-Apr-08
5
SD600N/R Series
Standard Recovery Diodes
(Stud Version), 600 A
Vishay Semiconductors
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1 K/W
R
=
0.0
2
K/ W
- D
elta
R
th
SA
0.0
4 K
/ W
0.0
6 K
/ W
0.1
K/ W
0.2 K
/ W
0.4 K/ W
0
100
200
300
400
500
600
700
800
900
1000
1100
0
100 200 300 400 500 600 700 800 900
DC
180°
120°
90°
60°
30°
RMSLimit
Conduction Period
Average Forward Current (A)
SD600N/ RSeries
(2500V to 3200V)
T = 150°C
J
2000
4000
6000
8000
10000
12000
110
100
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
SD600N/ RSeries
(400V to 2000V)
2000
4000
6000
8000
10000
12000
14000
0.01
0.1
1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T = 180 °C
No Voltag e Reapp lied
Rated V
Reapplied
RRM
J
SD600N/ RSeries
(400V to 2000V)
2000
4000
6000
8000
10000
110
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
SD600N/ RSeries
(2500V to 3200V)
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
2000
4000
6000
8000
10000
12000
0.01
0.1
1
Pulse Train Duration (s)
Initial T = 150 °C
No Voltage Reapplied
Rated V
Reapplied
J
RRM
VersusPulse Train Duration.
SD600N/ RSeries
(2500V to 3200V)
Maximum Non Repetitive Surge Current


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